Description
This device is a dual N-channel Power MOSFET
which utilizes the latest generation of design rules
for ST's proprietary STripFET™ V and
STripFET™ VI DeepGATE™ technology. The
lowest available RDS(on)* Qg in this chip scale
package renders the device suitable for the most
demanding DC-DC converter applications, where
high power density is required.

Features
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses

Application
■ Switching applications