VSMY9854535 Datasheet(PDF) - Vishay Siliconix

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VSMY9854535 Datasheet (PDF) - Vishay Siliconix

VSMY9854535 Datasheet PDF - Vishay Siliconix


Part #	VSMY9854535

Download	VSMY9854535 Download

File Size	257.07 Kbytes

Page	7 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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Description

High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology

VSMY9854535 Datasheet (PDF)

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VSMY9854535 Datasheet PDF - Vishay Siliconix


Part #	VSMY9854535

Download	VSMY9854535 Click to download

File Size	257.07 Kbytes

Page	7 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

Description	High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology

VSMY9854535 Datasheet (HTML) - Vishay Siliconix

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VSMY9854535 Product details

• Package type: surface mount
• Package form: high power SMD with lens
• Dimensions (L x W x H in mm): 3.85 x 3.85 x 2.24
• Peak wavelength: λp = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 45°
• Low forward voltage
• Designed for high drive currents: up to 1.0 A (DC) and up
to 5 A pulses
• Low thermal resistance: RthJP = 10 K/W
• Floor life: 168 h, MSL 3, according to J-STD-020
• Lead (Pb)-free reflow soldering

Similar Part No. - VSMY9854535

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	VSMY9854535	255Kb / 7P	High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology 01-Jul-16
	VSMY9854535	254Kb / 7P	High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology 01-Jul-16
	VSMY9854535	255Kb / 7P	High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology 01-Jul-16
	VSMY9854535	254Kb / 7P	High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology 01-Jul-16

Similar Description - VSMY9854535

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	VSMY7850X01_1106	144Kb / 7P	High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology 27-Jun-11
	VSMY98545DS	253Kb / 7P	High Power Infrared Emitting Diode, 850 nm,Surface Emitter Technology 08-May-15
	VSMY98545ADS	202Kb / 6P	High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology 29-Nov-16
	VSMY9857535	1,017Kb / 7P	High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology 05-Jul-16
	VSMY98575ADS	538Kb / 6P	High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology 18-Apr-18
	VSMY98525DS	217Kb / 6P	High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology 27-Jan-2022
	VSMY9854535	254Kb / 7P	High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology 01-Jul-16
	VSMY98545	220Kb / 7P	High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology 27-Jan-2022
	VSMY98575ADS	538Kb / 6P	High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology 18-Apr-18
	VSMA1085250	199Kb / 8P	High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology 08-Jul-2022

About Vishay Siliconix

Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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