| Manufacturer | Part # | Datasheet | Description |
 STMicroelectronics |
SCTH100N65G2-7AG
|
623Kb / 15P |
Automotive-grade silicon carbide Power MOSFET, 650 V, 95 A, 20 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
27-Nov-2018 |
|
SCTW40N120G2VAG
|
210Kb / 12P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mΩ (typ., TJ = 25 °C) in an HiP247 package
12-Nov-2020 |
|
SCTH35N65G2V-7AG
|
620Kb / 15P |
Automotive-grade silicon carbide Power MOSFET, 650 V, 45 A,55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
24-Jan-2020 |
|
SCTW100N65G2AG
|
423Kb / 11P |
Automotive-grade silicon carbide Power MOSFET 650 V, 100 A,20 mΩ (typ., TJ=25 °C), in an HiP247™ package
21-Nov-2018 |
|
SCTW100N120G2AG
|
217Kb / 11P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package
23-Jul-2020 |
|
SCTW35N65G2VAG
|
206Kb / 12P |
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package
09-Sep-2020 |
|
SCTW60N120G2AG
|
197Kb / 11P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package
18-May-2020 |
|
SCT070H120G3AG
|
396Kb / 14P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package
04-Apr-2023 |
|
SCT10N120AG
|
238Kb / 14P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package
21-Sep-2022 |