3P3R0 Marking, AP3P3R0MT datasheet(4/6 Pages) A-POWER

Part #	AP3P3R0MT

Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	A-POWER [Advanced Power Electronics Corp.]

Direct Link	http://www.a-power.com.tw

Logo

4 / 6 page

AP3P3R0MT

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

2011082301

Fig 11. Transfer Characteristics

Fig 12. Drain Current v.s. Case Temperature

120

160

Q G , Total Gate Charge (nC)

I D = -20 A

V DS = -15V

4000

8000

12000

16000

-V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

t , Pulse Width (s)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthjc + Tc

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

0.1

100

1000

0.01

0.1

100

-V DS , Drain-to-Source Voltage (V)

T C =25

o C

Single Pulse

100us

1ms

10ms

Operation in this

area limited by

RDS(ON)

120

160

100

125

150

T C , Case Temperature (

o C )

Limited by package

120

160

-V GS , Gate-to-Source Voltage (V)

T j =150

o C

T j =25

o C

V DS =-5V

3P3R0 Marking, AP3P3R0MT Datasheet(PDF) 4 Page - Advanced Power Electronics Corp.

AP3P3R0MT Datasheet(HTML) 4 Page - Advanced Power Electronics Corp.

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL