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2X Marking, 2N4401 Datasheet(PDF) 4 Page - First Silicon Co., Ltd

Part # 2N4401
Description  General Purpose Transistor
PDF  6 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

2N4401 Datasheet(HTML) 4 Page - First Silicon Co., Ltd

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LMBT4401LT1 UNIT 1
LMBT4401LT1 UNIT 2
h PARAMETERS
(V
CE = 10 Vdc, f = 1.0 kHz, T A = 25°C)
This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of
ransistors. To obtain these curves, a high–gain and a low–gain unit were selected from the LMBT4401LT1
lines, and the same units were used to develop the correspondingly numbered curves on each graph.
I
C , COLLECTOR CURRENT (mA)
Figure 11. Current Gain
I
C , COLLECTOR CURRENT (mA)
Figure 13. Voltage Feedback Ratio
0.1
0.2 0.3
0 5 0.7 1 0
2 0 3.0
7.0 5.0 10
300
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
I
C , COLLECTOR CURRENT (mA)
Figure 12. Input Impedance
50
20
10
5 0
2 0
1 0
0 5
I
C , COLLECTOR CURRENT (mA)
Figure 14. Output Admittance
100
50
20
10
5.0
2.0
1.0
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
V CE = 10 Vdc, T A = 25°C
Bandwidth = 1.0 Hz
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
7 0 5 0 10
LMBT4401LT1 UNIT 1
LMBT4401LT1 UNIT 2
LMBT4401LT1 UNIT 1
LMBT4401LT1 UNIT 2
LMBT4401LT1 UNIT 1
LMBT4401LT1 UNIT 2
0.1
0 2 0 3
0.5 0.7 1.0
2.0 3 0
7 0 5 0 10
0.1
0.2 0.3
0 5 0.7 1 0
2 0 3.0
7.0 5.0 10
R
S, SOURCE RESISTANCE (kΩ)
Figure 10. Source Resistance Effects
f = 1.0 kHz
0.010.02 0 05 0.1 0.2
0.5 1 0 2.0
5 0 10 20
50 100
10
8.0
6.0
4.0
2.0
0
500
100 200
500 1.0k 2 0k
5.0k 10k
20k
50k 100k
f , FREQUENCY (kHz)
Figure 9. Frequency Effects
I
C = 50
µ
A
I
C = 100 µA
I
C = 500
µ
A
I
C = 1.0 mA
I
C = 1.0 mA, R S = 150 Ω
I
C = 500
µ
A, R
S = 200
Ω
I
C = 100 µA, R S = 2.0 kΩ
I
C = 50 µA, R S = 4.0 kΩ
R
S = OPT MUM
SOURCE
RESISTANCE
10
8 0
6 0
4 0
2 0
0
2008. 08. 08
4/6
Revision No : 0
SEMICONDUCTOR
TECHNICAL DATA
2N4401



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