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2X Marking, 2N4401 Datasheet(PDF) 1 Page - First Silicon Co., Ltd

Part # 2N4401
Description  General Purpose Transistor
PDF  6 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

2N4401 Datasheet(HTML) 1 Page - First Silicon Co., Ltd

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MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V CEO
40
Vdc
Collector–Base Voltage
V CBO
60
Vdc
Emitter–Base Voltage
V EBO
6.0
Vdc
Collector Current — Continuous
I C
600
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
PD
225
mW
TA = 25°C
Derate above 25°C
1.8
mW/°C
Thermal Resistance, Junction to Ambient
RθJA
556
°C/W
Total Device Dissipation
PD
300
mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
2.4
mW/°C
Thermal Resistance, Junction to Ambient
RθJA
417
°C/W
Junction and Storage Temperature
TJ , Tstg
–55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
V (BR)CEO
Vdc
(I C = 1.0 mAdc, I B = 0)
40
—
Collector–Base Breakdown Voltage
V (BR)CBO
Vdc
(I C = 0.1 mAdc, I E = 0)
60
—
Emitter–Base Breakdown Voltage
V (BR)EBO
Vdc
(I E = 0.1 mAdc, I C = 0)
6.0
—
Base Cutoff Current
I BEV
µAdc
(V CE = 35 Vdc, V EB = 0.4 Vdc)
—
0.1
Collector Cutoff Current
I CEX
µAdc
(V CE = 35 Vdc, V EB = 0.4 Vdc)
—
0.1
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300
µs; Duty Cycle <2.0%.
2
EMITTER
3
COLLECTOR
1
BASE
Device
Marking
Shipping
2N4401
2X
3000/Tape & Reel
General Purpose Transistor
ORDERING INFORMATION
SEMICONDUCTOR
TECHNICAL DATA
2N4401
SOT–23
1
3
2
2008. 08. 08
1/6
Revision No : 0


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