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A1SHB Marking, DO2301C Datasheet(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # DO2301C
Description  P-Channel MOSFET uses advanced trench technology
PDF  5 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

DO2301C Datasheet(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  DO2301C Datasheet HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. DO2301C Datasheet HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. DO2301C Datasheet HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. DO2301C Datasheet HTML 4Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. DO2301C Datasheet HTML 5Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
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DO2301C
Description：
This P-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
Features：
1) VDS=-20V,ID=-2.5A,RDS(ON)<120mΩ@VGS=-4.5V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
Absolute Maximum Ratings：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
-20
V
VGS
Gate-Source Voltage
±12
V
ID
Continuous Drain Current
-2.5
A
IDM
Pulsed Drain Current
1
-10
PD
Power Dissipation
0.7
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
℃
Thermal Characteristics：
Symbol
Parameter
Max
Units
RƟJA
Thermal Resistance,Junction to Ambient
2
178
℃/W
Package Marking and Ordering Information：
Part NO.
Marking
Package
DO2301C
A1SHB.
SOT-23
G
D
S


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