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A1SHB Marking, DO2301C Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # DO2301C
Description  P-Channel MOSFET uses advanced trench technology
PDF  5 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

DO2301C Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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DO2301C
Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=-250μA
-20
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=-20V
---
---
-1
μA
IGSS
Gate-Source Leakage Current
VGS=±12V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=-250μA
-0.4
0.7
-1
V
RDS(ON)
Drain-Source On Resistance
VGS=-4.5V,ID=-2A
---
102
120
mΩ
VGS=-2.5V,ID=-2A
---
170
GFS
Forward Transconductance
VDS=-5V, ID=-2 A
---
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=-10V, VGS=0V, f=1MHz
---
290
---
pF
Coss
Output Capacitance
---
60
---
Crss
Reverse Transfer Capacitance
---
34
---
Switching Characteristics
td(on)
Turn-On Delay Time
VDD= -10V, RL=5Ω
VGS=-4.5V,RG=3Ω
---
10
---
ns
tr
Rise Time
---
5
---
ns
td(off)
Turn-Off Delay Time
---
21
---
ns
tf
Fall Time
---
7
---
ns
Qg
Total Gate Charge
VGS=-4.5V, VDS=-10V,
ID=-2A
---
3
---
nC
Qgs
Gate-Source
Charge
---
0.5
---
nC
Qgd
Gate-Drain “Miller” Charge
---
0.8
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
3
VGS=0V,IS=-2A
---
---
-1.2
V
ls
---
---
-2
A
---
140
4
Diode Forward Current
2
3
4
4



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