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A1SHB Marking, LCE2301C Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LCE2301C Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 2 page  FEATURE TrenchFET Power MOSFET APPLICATION z Load Switch for Portable Devices z DC/DC Converter Maximum ratings (Ta=25 ℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 V Continuous Drain Current (TJ=150 ℃) ID -2.0 Pulsed Drain Current IDM -10 Continuous Source-Drain Diode Current IS -0.72 A Maximum Power Dissipation PD 0. 35 W Thermal Resistance from Junction to Ambient(t 5s) R JA 357 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -55 ~ +150 ℃ θ ≤ MARKING Equivalent Circuit V(BR)DSS RDS(on)MAX ID -20 V mΩ@-4.5V A mΩ@-2.5V SOT-23 1. GATE 2. SOURCE 3. DRAIN 200 290 2.0 A1SHB LCE2301C Enhancement Mode Power MOSFET P-Channel Rev : www.leiditech.com 01.06.2018 1/2 |
Similar Description - LCE2301C |
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