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AD00 Marking, AOZ6606PI Datasheet(PDF) 13 Page - Alpha & Omega Semiconductors |
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AOZ6606PI Datasheet(HTML) 13 Page - Alpha & Omega Semiconductors |
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13 / 16 page ![]() Rev. 1.1 November 2018 www.aosmd.com Page 13 of 16 AOZ6606PI The power dissipation of inductor can be approximately calculated by output current and DCR of inductor. The actual junction temperature can be calculated with power dissipation in the AOZ6606PI and thermal impedance from junction to ambient. The maximum junction temperature of AOZ6606PI is 150ºC, which limits the maximum load current capability. The thermal performance of the AOZ6606PI is strongly affected by the PCB layout. Extra care should be taken by users during design process to ensure that the IC will operate under the recommended environmental conditions. 1. The exposed pad (LX) is connected to internal Highside FET source and Lowside FET drains. Connect a large copper plane to LX pin to help ther- mal dissipation. 2. Do not use thermal relief connection to the VIN and the GND pin. Pour a maximized copper area to the GND pin and the VIN pin to help thermal dissipation. 3. Input capacitor should be connected to the VIN pin and the GND pin as close as possible. 4. Make the current trace from LX pins to L to Co to the GND as short as possible. 5. Pour copper plane on all unused board area and connect it to stable DC nodes, like VIN, GND or VOUT. 6. Keep sensitive signal trace away from the LX pad. Pinductor_loss IO2 Rinductor 1.1 = Tjunction Ptotal_loss Pinductor_loss – JA = |
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