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03P30 Marking, RM03P30S2E Datasheet(PDF) 3 Page - Rectron Semiconductor |
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RM03P30S2E Datasheet(HTML) 3 Page - Rectron Semiconductor |
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3 / 9 page ![]() RATING AND CHARACTERISTICS CURVES (RM03P30S2E ) Fig 1. Normalized total power dissipation as a function of junction temperature Fig 2. Normalized continuous drain current as a function of junction temperature IDM is a single pulse (1) tp = 1 ms (2) tp = 10 ms (3) tp = 100 ms (4) DC; Tsp = 25 °C (5) DC; Tamb = 25 °C; 1 cm2 drain mounting pad Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage Tj (°C) -75 175 125 25 75 -25 001aao121 40 80 120 Pder (%) 0 Tj (°C) -75 175 125 25 75 -25 001aao122 40 80 120 Ider (%) 0 001aao255 VDS (V) -10-1 -102 -10 -1 -1 -10-1 -10 lD (A) -10-2 (1) (2) (3) (4) (5) |
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