-30

Electrical Characteristics (TC=25

unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID

Zero Gate Voltage Drain Current

IDSS

VDS=-24V,VGS

Gate-Body Leakage Current

IGSS

VGS=±8V,V DS =0V

-

-

±10

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID

Drain-Source On-State Resistance

RDS(ON)

VGS= -4.5V, I = -0.5A

D

Forward Transconductance

gFS

VDS=-10V,ID=-0.2A

-

0.16

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

PF

Output Capacitance

Coss

PF

Reverse Transfer Capacitance

Crss

VDS=-15V,VGS=0V,

F=1.0MHz

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

nS

Turn-on Rise Time

tr

nS

Turn-Off Delay Time

td(off)

nS

Turn-Off Fall Time

tf

VDD=-20V, R

250

L

VGS=-4.5V,R =6

G

nS

Total Gate Charge

Qg

nC

Gate-Source Charge

Qgs

nC

Gate-Drain Charge

Qgd

VDS=-30,ID=-20A,

VGS=-10V

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=-0.5A

-

1.3

V

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

3.

4. Guaranteed by design, not subject to production

5. EAS condition: Tj=25

,VDD=-30V,VG

AS=38A

A

-0.4

-0.7

-1.0

VGS= -2.5V, I = - 0.2A

D

-

1.7

2.5

-

2

2.9

0.8

nC

-

19

38

-

30

-

-

65

130

-

38

-

-

0.55

0.72

-

0.23

-

-

0.09

-

-

31

46

-

6.5

-

-

2.3

-