HT8MB5 Marking, HT8MB5 datasheet(2/22 Pages) ROHM

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HT8MB5

Datasheet

lThermal resistance

Parameter

Symbol

Values

Unit

Min.

Typ.

Max.

Thermal resistance, junction - case

RthJC*1

9.4

℃/W

Thermal resistance, junction - ambient

RthJA*4

62.5

℃/W

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol Type

Conditions

Values

Unit

Min.

Typ.

Max.

Drain - Source breakdown

voltage

V(BR)DSS

Tr1

VGS = 0V, ID = 1mA

Tr2

VGS = 0V, ID = -1mA

-40

Breakdown voltage

temperature coefficient

ΔV(BR)DSS　 Tr1 ID = 1mA, referenced to 25℃

28.9

mV/℃

ΔTj

Tr2

ID = -1mA, referenced to 25℃

-22

Zero gate voltage

drain current

IDSS

Tr1

VDS = 40V, VGS = 0V

μA

Tr2

VDS = -40V, VGS = 0V

-1

Gate - Source

leakage current

IGSS

Tr1

VGS = ±20V, VDS = 0V

±100

Tr2

VGS = ±20V, VDS = 0V

±100

Gate threshold

voltage

VGS(th)

Tr1

VDS = VGS, ID = 1mA

1.0

2.5

Tr2

VDS = VGS, ID = -1mA

-1.0

-2.5

Gate threshold voltage

temperature coefficient

ΔV

GS(th)

Tr1

ID = 1mA, referenced to 25℃

-4.6

mV/℃

ΔTj

Tr2

ID = -1mA, referenced to 25℃

3.7

Static drain - source

on - state resistance

RDS(on)*5

Tr1

VGS = 10V, ID = 5.0A

mΩ

VGS = 4.5V, ID = 5.0A

Tr2

VGS = -10V, ID = -6A

VGS = -4.5V, ID = -6A

Gate resistance

Tr1

2.7

Tr2

Forward Transfer

Admittance

|Yfs|*5

Tr1

VDS = 5.0V, ID = 5.0A

2.1

Tr2

VDS = -5V, ID = -6A

6.0

*1 Tc = 25℃, Limited only by maximum temperature allowed.

*2 Pw ≤ 10μs, Duty cycle ≤ 1%

*3 Tr1:L ⋍ 0.1mH, VDD = 20V, RG = 25Ω, Starting Tj = 25℃ Fig.3-1,3-2

Tr2: L ⋍ 0.1mH, VDD = -20V, RG = 25Ω,Starting Tj = 25℃ Fig.6-1,6-2

*4 Mounted on a Cu board (40×40×0.8mm)

*5 Pulsed

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