D4 Marking, EMD4 datasheet(2/12 Pages) ROHM

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EMD4 / UMD4N

Datasheet

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Symbol DTr1(NPN) DTr2(PNP)

Unit

Supply voltage

VCC

-50

Input voltage

VIN

-10 to 40

-40 to 6

Output current

-70

Collector current

IC(MAX)*1

100

-100

Power dissipation

EMD4/ UMD4N

PD*2*3

150

mW/Total

Junction temperature

150

℃

Range of storage temperature

Tstg

-55 to +150

℃

lElectrical characteristics (Ta = 25°C) <For DTr1(NPN)>

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Input voltage

VI(off)

VCC = 5V, IO = 100μA

0.5

VI(on)

VO = 0.3V, IO = 2mA

3.0

Output voltage

VO(on)

IO = 10mA, II = 0.5mA

100

300

Input current

VI = 5V

180

μA

Output current

IO(off)

VCC = 50V, VI = 0V

500

DC current gain

VO = 5V, IO = 5mA

Input resistance

32.9

61.1

kΩ

Resistance ratio

R2/R1

0.8

1.0

1.2

Transition frequency

fT*1

VCE = 10V, IE = -5mA,

f = 100MHz

250

MHz

lElectrical characteristics (Ta = 25°C) <For DTr2(PNP)>

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Input voltage

VI(off)

VCC = -5V, IO = -100μA

-0.3

VI(on)

VO = -0.3V, IO = -1mA

-1.4

Output voltage

VO(on)

IO = -5mA, II = -0.25mA

-100

-300

Input current

VI = -5V

-880

μA

Output current

IO(off)

VCC = -50V, VI = 0V

-500

DC current gain

VO = -5V, IO = -5mA

Input resistance

kΩ

Resistance ratio

R2/R1

3.7

4.7

5.7

Transition frequency

fT*1

VCE = -10V, IE = 5mA,

f = 100MHz

250

MHz

*1 Characteristics of built-in transistor.

*2 Each terminal mounted on a reference land.

*3 120mW per element must not be exceeded.

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