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TLP321 Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part # TLP321
Description  TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
PDF  9 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP321 Datasheet(HTML) 4 Page - Toshiba Semiconductor

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TLP321,TLP321-2,TLP321-4
2002-09-25
4
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VCC
―
12
48
V
Forward current
IF
―
16
20
mA
Collector current
IC
―
1
10
mA
Operating temperature
Topr
-25
―
85
°C
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF =10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR =5 V
—
—
10
µA
Capacitance
CT
V = 0, f = 1MHz
—
30
—
pF
Collector
-emitter
breakdown voltage
V(BR) CEO
IC = 0.5mA
80
—
—
V
Emitter
-collector
breakdown voltage
V(BR) ECO
IE = 0.1mA
7
—
—
V
VCE = 48V
—
10
100
nA
Collector dark current
ICEO
VCE = 48V, Ta = 85°C
—
2
50
µA
Capacitance
(collector to emitter)
CCE
V = 0, f = 1MHz
—
10
—
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Condition
MIn.
Typ.
Max.
Unit
50
—
600
Current transfer ratio
IC / IF
IF = 5mA, VCE = 5V
Rank GB
100
—
600
%
—
60
—
Saturated CTR
IC / IF (sat)
IF = 1mA, VCE = 0.4V
Rank GB
30
—
—
%
IC = 2.4mA, IF = 8mA
—
—
0.4
—
0.2
—
Collector
-emitter
saturation voltage
VCE (sat)
IC = 0.2mA, IF = 1mA
Rank GB
—
—
0.4
V



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