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TS19706CS Datasheet(PDF) 3 Page - Taiwan Semiconductor Company, Ltd |
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TS19706CS Datasheet(HTML) 3 Page - Taiwan Semiconductor Company, Ltd |
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3 / 9 page ![]() TS19706CS Taiwan Semiconductor 3 Version: A1605 ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL CONDITION MIN TYP MAX UNIT Oscillator Start-up Timer tSTR -- 222 -- µs GM Amplifier Reference voltage VREF 362.6 370 377.4 mV Transconductance Gm -- 60 -- µA/V Sink Current ICOMP_SINK -- 20 -- µA Source Current ICOMP_SOU -- 20 -- µA Driver Dropout voltage VOH IO = 10mA -- 0.7 -- V VOL IO = -10mA -- 0.2 -- V Rising time tr VCC=20V, CO =1nF -- 60 -- ns Falling time tf VCC=20V, CO =1nF -- 80 -- ns Output clamp voltage VO_CLAMP -- 13 15.0 V Leading edge blanking time (Note 5) LEBt -- 0.5 -- µs MOSFET Section Drain-Source Breakdown Voltage BVDS 630 -- -- V Drain-Source On-Resistance RDS(ON) VGS=10V, ID=1A -- 3.2 3.8 Ω Thermal Section (Note 5, 6) Thermal Shutdown -- 130 -- °C Note: 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may remain possibility to affect device reliability. 2. Devices are ESD sensitive. Handling precautions recommended. 3. Thermal Resistance is specified with the component mounted on a low thermal conductivity test board in free air at TA=25°C. 4. The device is not guaranteed to function outside its operating conditions. 5. Guaranteed by design. 6. Linear degeneration Type. ORDERING INFORMATION PART NO. PACKAGE PACKING TS19706CS RLG SOP-8 2,500pcs / 13”Reel |
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