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TLV70518YFPR Datasheet(PDF) 5 Page - Texas Instruments |
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TLV70518YFPR Datasheet(HTML) 5 Page - Texas Instruments |
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5 / 36 page ![]() 5 TLV705, TLV705P www.ti.com SBVS151F – DECEMBER 2010 – REVISED APRIL 2017 Product Folder Links: TLV705 TLV705P Submit Documentation Feedback Copyright © 2010–2017, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods my affect device reliability. (2) All voltages are with respect to network ground pin. 6 Specifications 6.1 Absolute Maximum Ratings specified at TJ = –40°C to +125°C, unless otherwise noted. All voltages are with respect to GND. (1) MIN MAX UNIT Voltage(2) VIN –0.3 6 V VEN –0.3 6 V VOUT –0.3 6 V Maximum output current IOUT Internally limited Output short-circuit duration Indefinite Temperature Operating junction, TJ –55 150 °C Storage, Tstg –55 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged device model (CDM), per JEDEC specification JESD22-C101(2) ±500 6.3 Recommended Operating Conditions over operating junction temperature range (unless otherwise noted) MIN NOM MAX UNIT VIN Input voltage 2 5.5 V VOUT Output voltage 0.7 4.8 V IOUT Output current 0 200 mA TJ Junction temperature –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.4 Thermal Information THERMAL METRIC(1) TLV705 UNIT YFF, YFP (DSBGA) YFM (PicoStar) 4 PINS 4 PINS RθJA Junction-to-ambient thermal resistance 160 191.7 °C/W RθJC(top) Junction-to-case (top) thermal resistance 80 3.1 °C/W RθJB Junction-to-board thermal resistance 90 36.5 °C/W ψJT Junction-to-top characterization parameter 0.5 2.8 °C/W ψJB Junction-to-board characterization parameter 78 26.5 °C/W |
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