CY7C1069GE datasheet(13/20 Pages) CYPRESS

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Document Number: 001-81539 Rev. *J

Page 13 of 20

CY7C1069G

CY7C1069GE

Figure 10. Write Cycle No. 1 (CE Controlled) [30, 31, 32]

Figure 11. Write Cycle No. 2 (WE Controlled, OE Low) [30, 31, 32, 34]

Switching Waveforms (continued)

ADDRESS

DATA I/O

tWC

tSCE

tAW

tSA

tPWE

tHA

tHD

tHZOE

tSD

DATAIN VALID

Note 33

ADDRESS

DATA I/O

tWC

tSCE

tHD

tSD

tAW

tHA

tSA

tPWE

tLZWE

t HZWE

DATAIN VALID

Note 33

Notes

30. For all dual chip enable devices, CE is the logical combination of CE1 and CE2. When CE1 is LOW and CE2 is HIGH, CE is LOW; when CE1 is HIGH or CE2 is LOW,

CE is HIGH.

31. The internal write time of the memory is defined by the overlap of WE = VIL, CE = VIL. These signals must be LOW to initiate a write, and the HIGH transition of any

of these signals can terminate the operation. The input data setup and hold timing should be referenced to the edge of the signal that terminates the write.

32. Data I/O is in high impedance state if CE = VIH, or OE = VIH.

33. During this time I/O are in output put state. Do not apply input signals.

34. The minimum write cycle width should be sum of tHZWE and tSD,

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