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IXTF1N250 Datasheet(PDF) 1 Page - IXYS Corporation

Part # IXTF1N250
Description  N-Channel Enhancement Mode
PDF  4 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTF1N250 Datasheet(HTML) 1 Page - IXYS Corporation

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© 2009 IXYS CORPORATION, All Rights Reserved
DS100222(12/09)
High Voltage
Power MOSFET
N-Channel Enhancement Mode
(Electrically Isolated Tab)
IXTF1N250
V
DSS
= 2500V
I
D25
= 1A
R
DS(on) ≤
≤≤≤≤ 40
Ω
Ω
Ω
Ω
Ω
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
2500
V
V
DGR
T
J
= 25
°C to 150°C, R
GS = 1MΩ
2500
V
V
GSS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
C = 25°C
1
A
I
DM
T
C = 25°C, Pulse Width Limited by TJM
6A
P
D
T
C = 25°C
110
W
T
J
- 55 ... +150
°C
T
JM
150
°C
T
stg
- 55 ... +150
°C
T
L
1.6mm (0.062 in.) from Case for 10s
300
°C
T
SOLD
Plastic Body for 10s
260
°C
M
d
Mounting Force
20..120 / 4.5..27
Nm/lb.in.
V
ISOL
50/60Hz, 1min
2500
V~
Weight
5
g
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
BV
DSS
V
GS = 0V, ID = 250µA
2500
V
V
GS(th)
V
DS = VGS, ID = 250µA
2.0
4.0
V
I
GSS
V
GS = ±20V, VDS = 0V
±100 nA
I
DSS
V
DS = 0.8 • VDSS, VGS= 0V
25
µA
Note 2, T
J = 125°C
25
µA
R
DS(on)
V
GS = 10V, ID = 0.5 • ID25, Note 1
40
Ω
1 = Gate
5 = Drain
2 = Source
ISOPLUS i4-PakTM
Isolated Tab
1
5
2
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V Electrical Isolation
Molding Epoxies meet UL 94 V-0
Flammability Classification
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
High Voltage Power Supplies
Capacitor Discharge
Pulse Circuits
Advance Technical Information


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