SPDT RF Switch

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Notes

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.

B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.

C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled

to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp

RF Switch with internal driver

Single Supply Voltage, +2.3V to +5.5V

High Power

JSW2-63VHDRP+

CASE STYLE: MT2140

The Big Deal

• High power handling, 2.5W @2 GHz

• High IIP3, +75 dBm

• Low insertion loss, 0.4 dB

• Fast switching, 2µs

• Tiny Size, 2x2mm

Product Overview

Mini-Circuits’ JSW2-63VHDRP+ is a reflective symmetric MMIC SPDT switch with an internal CMOS driver

designed for wideband operation from 5 to 6000 MHz. This model provides power handling up to 2.5W

with low insertion loss, high dynamic range, and fast switching speed in a tiny 2x2mm 12-Lead MCLP

package. JSW2-63VHDRP+ operates on a single positive supply voltage with low current consumption of

just 120µA. Produced using a Silicon-on-Insulator process, it provides a high level of ESD protection and

excellent repeatability.

The switching logic for this model sets the switch from COM to RF1 with control voltage in the low state and

COM to RF2 with control voltage in the high state. Alternative model (JSW2-63VHDRG+) is also available

with opposite switching logic for your convenience.

Key Features

Feature

Advantages

Wideband, 5 to 6000 MHz

One model can be used in many applications, saving component count. Also

ideal for wideband applications such as military and instrumentation.

High power and low loss

• 2.5W power handling @ 2 GHz

• 0.4 dB insertion loss

Supports applications with a range of power requirements with excellent trans-

mission of signal power from input to output.

High Isolation

• 68 dB at 100 MHz

• 20 dB at 5000 MHz

High isolation significantly reduces leakage of power into OFF ports.

High linearity,

• +75 dBm IIP3

• +115 dBm IIP2

High linearity minimizes unwanted intermodulation products which are difficult

or impossible to filter in multi-carrier environments, or in the presence of strong

interfering signal from adjacent circuitry or received by antenna.

Built-in CMOS driver

Eliminates the need for an external driver, saving PCB space and cost.

Tiny size, 2 x 2mm QFN package

Tiny footprint saves space in dense layouts while providing low inductance, repeatable

transitions, and excellent thermal contact to the PCB.