Final Datasheet

9

V2.0

2017-12-18

IR MOSFET-StrongIRFET™

IRF100P219

Electrical characteristic diagrams

Figure 15 Maximum Effective Transient Thermal Impedance, Junction-to-Case

Figure 13 Typical On-Resistance vs. Drain

Current

Figure 14 Threshold Voltage vs. Temperature

0

25

50

75

100 125 150 175 200

ID, Drain Current (A)

0

1

2

3

4

5

VGS = 5.0V

VGS = 7.0V

VGS = 8.0V

VGS = 10V

VGS = 12V

1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

1

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

-75 -50 -25 0

25 50 75 100 125 150 175

TJ , Temperature ( °C )

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

ID = 278µA

ID = 1.0mA

ID = 1.0A