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74LVCV2G66DP Datasheet(PDF) 6 Page - NXP Semiconductors

Part # 74LVCV2G66DP
Description  Overvoltage tolerant bilateral switch
PDF  23 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74LVCV2G66DP Datasheet(HTML) 6 Page - NXP Semiconductors

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9397 750 13027
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 2 April 2004
6 of 23
Philips Semiconductors
74LVCV2G66
Overvoltage tolerant bilateral switch
[1]
All typical values are measured at Tamb =25 °C.
[2]
For overvoltage signals (VS >VCC) the condition VY <VZ must be observed.
Tamb = −40 °C to +125 °C
VIH
HIGH-level input
voltage
VCC = 2.3 V to 2.7 V
0.6
× V
CC
--V
VCC = 3.0 V to 3.6 V
2.0
-
-
V
VCC = 4.5 V to 5.5 V
0.55
× V
CC
--V
VIL
LOW-level input
voltage
VCC = 2.3 V to 2.7 V
-
-
0.1
× V
CC
V
VCC = 3.0 V to 3.6 V
-
-
0.5
V
VCC = 4.5 V to 5.5 V
-
-
0.15
× V
CC
V
ILI
input leakage current
VI = 5.5 V or GND; VCC = 5.5 V
-
-
±5
µA
IS(OFF)
analog switch
OFF-state current per
channel
VS = 0 V or 5.5 V;
VCC = 2.3 V to 5.5 V;
see Figure 5
[2] --
±10
µA
IS(ON)
analog switch
ON-state current per
channel
VS = 0 V or 5.5 V;
VCC = 2.3 V to 5.5 V;
see Figure 6
[2] --
±10
µA
ICC
quiescent supply
current
VI =VCC or GND; IO =0A;
VCC = 5.5 V
--40
µA
∆ICC
additional quiescent
supply current per pin
VI =VCC − 0.6 V; IO =0A;
VCC = 3.0 V to 5.5 V
--50
µA
Table 8:
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VI = GND and VO = GND or 5.5 V.
VI = 5.5 V or GND and VO = open circuit
Fig 5.
Test circuit for measuring switch OFF-state
current.
Fig 6.
Test circuit for measuring switch ON-state
current.
001aaa534
Z
Y
IS
VI
GND
VCC
VIL
VO
E
IS
001aaa535
Y
Z
IS
VI
GND
VCC
VIH
VO
E



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