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74LVCV2G66DP Datasheet(PDF) 6 Page - NXP Semiconductors |
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74LVCV2G66DP Datasheet(HTML) 6 Page - NXP Semiconductors |
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6 / 23 page ![]() 9397 750 13027 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 2 April 2004 6 of 23 Philips Semiconductors 74LVCV2G66 Overvoltage tolerant bilateral switch [1] All typical values are measured at Tamb =25 °C. [2] For overvoltage signals (VS >VCC) the condition VY <VZ must be observed. Tamb = −40 °C to +125 °C VIH HIGH-level input voltage VCC = 2.3 V to 2.7 V 0.6 × V CC --V VCC = 3.0 V to 3.6 V 2.0 - - V VCC = 4.5 V to 5.5 V 0.55 × V CC --V VIL LOW-level input voltage VCC = 2.3 V to 2.7 V - - 0.1 × V CC V VCC = 3.0 V to 3.6 V - - 0.5 V VCC = 4.5 V to 5.5 V - - 0.15 × V CC V ILI input leakage current VI = 5.5 V or GND; VCC = 5.5 V - - ±5 µA IS(OFF) analog switch OFF-state current per channel VS = 0 V or 5.5 V; VCC = 2.3 V to 5.5 V; see Figure 5 [2] -- ±10 µA IS(ON) analog switch ON-state current per channel VS = 0 V or 5.5 V; VCC = 2.3 V to 5.5 V; see Figure 6 [2] -- ±10 µA ICC quiescent supply current VI =VCC or GND; IO =0A; VCC = 5.5 V --40 µA ∆ICC additional quiescent supply current per pin VI =VCC − 0.6 V; IO =0A; VCC = 3.0 V to 5.5 V --50 µA Table 8: Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground 0 V). Symbol Parameter Conditions Min Typ Max Unit VI = GND and VO = GND or 5.5 V. VI = 5.5 V or GND and VO = open circuit Fig 5. Test circuit for measuring switch OFF-state current. Fig 6. Test circuit for measuring switch ON-state current. 001aaa534 Z Y IS VI GND VCC VIL VO E IS 001aaa535 Y Z IS VI GND VCC VIH VO E |
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