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OMH310 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers

Part # OMH310
Description  DUAL, LOW VOLTAGE, LOW RDS(on), MOSFET H-BRIDGE CIRCUIT IN A PLASTIC PACKAGE
PDF  4 Pages
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Manufacturer  ETC [List of Unclassifed Manufacturers]
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OMH310 Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers

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2.1 - 30
OMH310 OMH315
2.1
ELECTRICAL CHARACTERISTICS: OMH310 (TC = 25° unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, I
D = 250 µA, VGS = 0
V
(BR)DSS
50
--V
Zero Gate Voltage Drain Current = V
GS, VDS = Max. Rat.
I
DSS
-
-
25.0
µA
V
DS = Max. Rat. x 0.8, TC = 70°C
-
-
500.0
µA
Gate-Body Leakage, V
GS = ±12 V
I
GSS
-
-
±500
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
DS = VGS, ID = 250 µA
V
GS(th)
2.0
-
4.0
V
Static Drain-Source On-Resistance, V
GS = 10 Vdc, ID = 9.0 A
R
DS(on)
-
-
0.1
Static Drain-Source On-Resistance T
C = 70°C
-
-
0.2
On State Drain Current, V
DS > ID(on) X RDS(on) Max., VGS = 10 V
I
D(on)
15
--A
DYNAMIC CHARACTERISTICS
Forward Transconductance, V
DS > ID(on) X RDS(on) Max., ID = 9.0A
g
fs
3.0
-
-
mho
Input Capacitance
V
DS = 25 V,
C
iss
-
-
650
pF
Output Capacitance
V
GS = 0,
C
oss
-
-
450
pF
Reverse Transfer Capacitance
f = 1.0 mHz
C
rss
-
-
280
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
d(on)
-
-
30
ns
Rise Time
V
DD = 30 V, ID = 3 A,
t
r
-
-
85
ns
Turn-Off Delay Time
R
GS = 50 , VGS = 10 V
t
d(off)
-
-
90
ns
Fall Time
t
f
-
-
110
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current
I
SD
--
14
A
Source - Drain Current Pulsed
I
SDM*-
-
56
A
Forward On-Voltage, I
SD = 28 A, VGS = 0
V
SD
-
-
1.8
V
Reverse Recovery Time
I
SD = 13 A, di/dt = 100 A/µSec
t
rr
-
120
-
ns
Reverse Recovered Charge
Q
rr
-
0.15
-
µC
RESISTOR CHARACTERISTICS
Resistor Tolerance
R
S
9.0
10
11
m
Temperature Coefficient, -40°C to +70°C
T
cr
-
100
-
ppm
* Indicates Pulse Test 300 µsec, Duty Cycle 1.5%



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