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OMH310 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

Part # OMH310
Description  DUAL, LOW VOLTAGE, LOW RDS(on), MOSFET H-BRIDGE CIRCUIT IN A PLASTIC PACKAGE
PDF  4 Pages
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Manufacturer  ETC [List of Unclassifed Manufacturers]
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OMH310 Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers

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OMH310
OMH315
Dual 50 Volt, 15 And 20 Amp H-Bridge
With Current And Temperature Sensing
In A Low Profile Plastic Package
4 11 R0
DUAL, LOW VOLTAGE, LOW RDS(on), MOSFET
H-BRIDGE CIRCUIT IN A PLASTIC PACKAGE
FEATURES
• H-Bridge Configuration
• Zener Gate Protection
• 10 m Shunt Resistor
• 2 Linear Thermal Sensors, One For Each Bridge
• Isolated Package
• Output Currents Up To 20 Amps
DESCRIPTION
This series of MOSFET switches is configured as a Dual H-Bridge with common VDD
lines, precision series shunt resistor in the source line, and sensing elements to
monitor the substrate temperature of each switch. This device is ideally suited for
Stepping Motor Control applications where size, performance, and efficiency are key.
MAXIMUM RATINGS (TC = @ 25°C)
Part
VDS
RDS(on)
ID
Package
Number
(Volts)
(m )
(Amps)
OMH310
50
100
15
MP-3
OMH315
50
70
20
MP-3
ABSOLUTE MAXIMUM RATINGS (TC = @ 25°C unless otherwise noted)
Parameter
OMH310
OMH315
Units
Drain Source Voltage, VDS
50
50
V
Drain-Gate (RGS = 1m ), VDGR
50
50
V
Continuous Drain Current, ID @ TC = 25°C
15
25
A
Continuous Drain Current, ID @ TC = 70°C
11
16
A
Pulse Drain Current, IDM (1)
56
100
A
Maximum Power Dissipation, PD @ TC = 25°C (2)
20
50
W
Maximum Power Dissipation, PD @ TC = 70°C (2)
1 1
18
W
Linear Derating Factor, Junction-To-Case
0 . 2
0.33
W/C
Thermal Resistance, Junction-To-Case
5.0
3.0
°C/W
Notes:
(1) Pulse Test: Pulse width 300 sec. Duty Cycle 1.5%. (2) Maximum Junction Temperature = 125°C.


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