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SFH-4141 Datasheet(PDF) 2 Page - OSRAM GmbH |
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SFH-4141 Datasheet(HTML) 2 Page - OSRAM GmbH |
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2 / 9 page ![]() 2016-07-29 2 Version 1.2 SFH 4141 Maximum Ratings (TA = 25 °C) Characteristics (TA = 25 °C) Parameter Symbol Values Unit Operation and storage temperature range T op; Tstg -40 ... 85 °C Reverse voltage V R 5 V Forward current I F 60 mA Surge current (t p ≤ 100 µs, D = 0) I FSM 1 A Power consumption Ptot 100 mW ESD withstand voltage (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) VESD 2 kV Thermal resistance junction - ambient 1) page 8 RthJA 350 K / W Thermal resistance junction - soldering point RthJS 200 K / W Parameter Symbol Values Unit Peak wavelength (I F = 20 mA, tp = 20 ms) (typ) λ peak 950 nm Centroid wavelength (IF = 20 mA, tp = 20 ms) (typ) λ centroid 940 nm Spectral bandwidth at 50% of Imax (IF = 20 mA, tP = 20 ms) (typ) ∆λ 42 nm Half angle (typ) ϕ ± 9 ° Dimensions of active chip area (typ) L x W 0.3 x 0.3 mm x mm Rise and fall time of I e ( 10% and 90% of Ie max) (I F = 20 mA, RL = 50 Ω) (typ) t r, tf 12 ns Forward voltage (IF = 20 mA, tp = 20 ms) (typ (max)) VF 1.3 (≤ 1.6) V Forward voltage (IF = 1 A, tp = 100 µs) (typ (max)) VF 3.6 (≤ 4.6) V Reverse current I R not designed for reverse operation µA Total radiant flux (I F = 20 mA, tP = 20 ms) (typ) Φ e 12 mW |
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