Philips Semiconductors

PI4884

TrenchMOS™ logic level FET

Product data

Rev. 02 — 12 April 2002

6 of 12

9397 750 09583

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 6.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 7.

Drain-source on-state resistance as a function

of drain current; typical values.

Fig 8.

Normalized drain source on-state resistance

factor as a function of junction temperature.

VGS = 2.2 V

ID

(A)

16

12

8

4

0

2.5 V

2.8 V

5 V

4 V

0

0.4

0.8

1.2

1.6

2.0

VDS (V)

003aaa162

20

16

12

8

4

0

ID

(A)

VGS (V)

01

2

4

3

150 οC

25 οC

003aaa163

RDSon

(m

Ω)

40

0

160

200

120

80

ID (A)

16

04

8

12

VGS = 2.5 V

2.2 V

4 V

5 V

003aaa164

03aa27

0

0.4

0.8

1.2

1.6

2

-60

0

60

120

180

Tj (

a

a

R

DSon

R

DSon 25

°C

()

------------------------------

=