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SD57030 Datasheet(PDF) 1 Page - STMicroelectronics

Part # SD57030
Description  RF POWER TRANSISTORS The LdmoST FAMILY
PDF  7 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SD57030 Datasheet(HTML) 1 Page - STMicroelectronics

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March, 24 2003
SD57030
RF POWER TRANSISTORS
The
LdmoST FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 30 W WITH 13 dB gain @ 945 MHz
• BeO FREE PACKAGE
DESCRIPTION
The SD57030 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The SD57030 is designed for high gain and
broadband performance operating in common
source mode at 28 V. It is ideal for base station
applications requiring high linearity.
PIN CONNECTION
1
3
2
1. Drain
2. Gate
3. Source
M243
(Epoxy Sealed)
ORDER CODE
SD57030
BRANDING
TSD57030
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Symbol
Parameter
Value
Unit
V(BR)DSS
Drain-Source Voltage
65
V
VDGR
Drain-Gate Voltage (RGS = 1 MΩ)
65
V
VGS
Gate-Source Voltage
+ 20
V
ID
Drain Current
4
A
PDISS
Power Dissipation (@ Tc = 70°C)
74
W
Tj
Max. Operating Junction Temperature
200
°C
TSTG
Storage Temperature
-65 to + 200
°C
THERMAL DATA
Rth(j-c)
Junction -Case Thermal Resistance
1.75
°C/W


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