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HMC902LP3E Datasheet(PDF) 4 Page - Analog Devices |
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HMC902LP3E Datasheet(HTML) 4 Page - Analog Devices |
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4 / 13 page ![]() HMC902LP3E Data Sheet Rev. E | Page 4 of 13 ABSOLUTE MAXIMUM RATINGS Table 2. Parameter Rating Drain Bias Voltage 4.5 V Radio Frequency (RF) Input Power 10 dBm Gate Bias Voltages VGG1 −2 V to +0.2 V VGG2 −2 V to +0.2 V Channel Temperature 150°C Continuous Power Dissipation, PDISS (T = 85°C, Derate 7 mW/°C Above 85°C) 0.45 W Thermal Resistance (Channel to Ground Pad) 143.8°C/W Storage Temperature −65°C to +150°C Operating Temperature −40°C to +85°C Electrostatic Discharge (ESD) Sensitivity Human Body Model (HBM) Class 1A, Passed 250 V Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. ESD CAUTION |
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