HMC8410LP2FE datasheet(14/17 Pages) AD

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HMC8410

Data Sheet

Rev. A | Page 14 of 17

APPLICATIONS INFORMATION

Figure 38 shows the basic connections for operating the

HMC8410. AC couple the input and output of the HMC8410

with appropriately sized capacitors. DC block capacitors and RF

choke inductors are supplied on the RFIN and RFOUT pins of

the HMC8410 evaluation board. See Table 6 for additional

information. These dc block capacitors and RF choke inductors

form wideband bias tees on the input and output ports to provide

both ac coupling and the necessary supply voltages to the RFIN

and RFOUT pins. A 5 V dc bias is supplied to the amplifier

through the choke inductor connected to the RFOUT pin, and

the negative VGG1 voltage is supplied to the RFIN pin through

the choke inductor.

RECOMMENDED BIAS SEQUENCING

To not damage the amplifier, follow the recommended bias

sequencing.

During Power-Up

The recommended bias sequence during power-up for the

HMC8410 follows:

1. Connect to GND.

2. Set VGG1 to −2 V.

3. Set VDD to +5 V.

4. Increase VGG1 to achieve a typical supply current (IDQ) =

65 mA.

5. Apply the RF signal.

During Power-Down

The recommended bias sequence during power-down for the

HMC8410 follows:

1. Turn off the RF signal.

2. Decrease VGG1 to −2 V to achieve a typical IDQ = 0 mA.

3. Decrease VDD to 0 V.

4. Increase VGG1 to 0 V.

The bias conditions previously listed (VDD = 5 V and IDQ =

65 mA) are the recommended operating points to achieve

optimum performance. The data used in this data sheet was

taken with the recommended bias conditions. When using the

HMC8410 with different bias conditions, different performance

than what is shown in the Typical Performance Characteristics

section may result.

Figure 18, Figure 30, and Figure 31 show that increasing the

voltage from 2 V to 7 V typically increases P1dB and PSAT at the

expense of power consumption with minor degradation on

noise figure (NF).

TYPICAL APPLICATION CIRCUIT

PACKAGE

BASE

GND

VDD

RFOUT

RFIN/VGG1

590nH

20pF

2.2µF

10nF

HMC8410

VGG1

590nH

C15

20pF

C14

4.7µF

C13

100nF

Figure 38. Typical Application Circuit

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