HIP6004E

FN4997 Rev 3.00

Page 11 of 14

November 10, 2015

Schottky Selection

during the dead time between turning off the lower MOSFET and

turning on the upper MOSFET. The diode must be a Schottky

type to prevent the lossy parasitic MOSFET body diode from

conducting. It is acceptable to omit the diode and let the body

diode of the lower MOSFET clamp the negative inductor swing,

but efficiency will drop one or two percent as a result. The diode’s

rated reverse breakdown voltage must be greater than the

maximum input voltage.

HIP6004E DC-DC Converter Application

Circuit

Figure 11 shows an application circuit of a DC-DC Converter

for a microprocessor. Detailed information on the circuit,

including a complete bill-of-materials and circuit board

description, can be found in AN9916. This application note

also contains the application information for ISL6525, an

controller IC designed to meet the VTT voltage and power-up

sequencing specification given in the Intel VRM8.5.

+12V

PGND

HIP6004E

GND

LGATE

UGATE

PHASE

BOOT

VCC

+5V OR LESS

NOTE:

NOTE:

+

-

+12V

PGND

HIP6004E

VSEN

RT

FB

COMP

VID25mV

VID0

VID1

VID2

OVP

SS

PGOOD

D/A

GND

MONITOR

OSC

VCC

L2

0.1

F

1

F

0.1

F

0.1

F

470pF

10nF

56K

3.32K

2.4

H

3x1000

F

5x1000

F

0.033

F

LGATE

UGATE

OCSET

PHASE

BOOT

27

D1

Q1

Q2

2N6394

1.8K

1000pF

F1

2K

+5V

OR

+12V

1

2

3

4

5

6

7

9

10

11

12

13

14

15

16

17

19

20

18

AND

PROTECTION

+

-

+

-

Component Selection Notes:

FIGURE 11. MICROPROCESSOR DC-DC CONVERTER

8

VID3

L1 - 1

H