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EL2126CSZ Datasheet(PDF) 15 Page - Renesas Technology Corp

Part # EL2126CSZ
Description  Ultra-Low Noise, Low Power, Wideband Amplifier
PDF  19 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

EL2126CSZ Datasheet(HTML) 15 Page - Renesas Technology Corp

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EL2126
FN7046 Rev 4.00
Page 15 of 19
May 2, 2007
Applications Information
Product Description
The EL2126 is an ultra-low noise, wideband monolithic
operational amplifier built on Elantec's proprietary high speed
complementary bipolar process. It features 1.3nV/
Hz input
voltage noise, 200µV typical offset voltage, and 73dB THD. It is
intended for use in systems such as ultrasound imaging where
very small signals are needed to be amplified. The EL2126
also has excellent DC specifications: 200µV VOS, 22µA IB,
0.4µA IOS, and 106dB CMRR. These specifications allow the
EL2126 to be used in DC-sensitive applications such as
difference amplifiers.
Gain-Bandwidth Product
The EL2126 has a gain-bandwidth product of 650MHz at ±5V.
For gains less than 20, higher-order poles in the amplifier's
transfer function contribute to even higher closed-loop
bandwidths. For example, the EL2126 has a -3dB bandwidth of
100MHz at a gain of 10 and decreases to 33MHz at gain of 20.
It is important to note that the extra bandwidth at lower gain
does not come at the expenses of stability. Even though the
EL2126 is designed for gain
 10. With external compensation,
the device can also operate at lower gain settings. The RC
network shown in Figure 50 reduces the feedback gain at high
frequency and thus maintains the amplifier stability. R values
must be less than RF divided by 9 and 1 divided by 2
RC
must be less than 200MHz.
Choice of Feedback Resistor, RF
The feedback resistor forms a pole with the input capacitance.
As this pole becomes larger, phase margin is reduced. This
increases ringing in the time domain and peaking in the
frequency domain. Therefore, RF has some maximum value
which should not be exceeded for optimum performance. If a
large value of RF must be used, a small capacitor in the few pF
range in parallel with RF can help to reduce this ringing and
peaking at the expense of reducing the bandwidth. Frequency
response curves for various RF values are shown in the typical
performance curves section of this data sheet.
Noise Calculations
The primary application for the EL2126 is to amplify very small
signals. To maintain the proper signal-to-noise ratio, it is
essential to minimize noise contribution from the amplifier.
Figure 51 shows all the noise sources for all the components
around the amplifier.
VN is the amplifier input voltage noise
IN+ is the amplifier positive input current noise
IN- is the amplifier negative input current noise
VRX is the thermal noise associated with each resistor:
where:
k is Boltzmann's constant = 1.380658 x 10-23
T is temperature in degrees Kelvin (273 + °C)
The total noise due to the amplifier seen at the output of the
amplifier can be calculated by using the Equation 2.
As the equation shows, to keep noise at a minimum, small
resistor values should be used. At higher amplifier gain
configuration where R2 is reduced, the noise due to IN-, R2,
and R1 decreases and the noise caused by IN+, VN, and R3
starts to dominate. Because noise is summed in a root-mean-
squares method, noise sources smaller than 25% of the
largest noise source can be ignored. This can greatly simplify
the formula and make noise calculation much easier to
calculate.
-
+
RF
R
C
VIN
VOUT
FIGURE 50.
-
+
VON
VIN
IN+
IN-
R2
R3
R1
VN
VR3
VR2
VR1
FIGURE 51.
VRX
4kTRx
=
(EQ. 1)
VON
BW
=
VN
2
1
R1
R2
-------
+


 2
IN-
2
R1
2
IN+
2
R3
2
1
R1
R2
-------
+


 2
+
4K T R1 4KTR2
R1
R2
-------


 2
+
4KTR3
1
R1
R2
-------
+


 2
++
+
(EQ. 2)



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