Revision Date: 11/29/04

The MMA709-3030 is a Power InGaP HBT device that is

designed to provide moderate power levels from 100 MHz

to 2.5 GHz. Best operation is obtained across narrow

bandwidths, typically 10%. The device is characterized

in Class A operation. The device is assembled in a low

profile plastic package that is a 3mm square DFN style

that has eight leads. The backside of the packages are

DC/RF/Thermal ground. The device is also available in

SOIC8 Package.

•

High Output Power: +34 dBm (Typ)

•

•

High Dynamic Range: 97 dB (Typ)

•

3mm square DFN plastic package

NOTES:

1. All measurements from device evaluation boards.

2. V

S

V = 7.00 V, I

3. IP3: Power output per tone = +15dBm, separation = 1.22 MHz

Parameter

Symbol

Condition

1960 MHz

2140 MHz

Units

MIN

TYP

MAX

MIN

TYP

MAX

Gain

SSG

1, 2

10

11

9

9.5

13.5

dB

Output Power

P

1dB

1, 2

+33

+34

+33

+34

dBm

OIP3

1, 2, 3

+52

+55

+50

+53

dBm

Input VSWR

1, 2

2:1

2:1

Noise Figure

NF

1, 2

6.5

6.5

6.5

7.0

dB

Spur Free Dynamic Range

SFDR

95

102

95

102

dB

Thermal Resistance

JC

2

12

°C/W

MMA709

2 Watt InGaP HBT Amplifier

3030 OUTLINE

Parameters

Symbol

Minimum

Maximum

Unit

Operating temperature Range

T

OP

-40

+85

°C

Storage Temperature Range

T

STOR

-54

+125

°C

Breakdown Voltage, Collector to Emitter

BV

CEO

V

14.5

V

DC Collector Current

I

CC

900

mA

Operating Junction Temperature

T

J

T

150

°C

Description:

RF Specifications:

Features:

Absolute Maximum Ratings:

Contact the factory when using other than 7 volts.

SOIC8 OUTLINE