MMRF1304LR5 datasheet(2/12 Pages) NXP

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RF Device Data

Freescale Semiconductor, Inc.

MMRF1304LR5

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

--0.5, +133

Vdc

Gate--Source Voltage

VGS

--6.0, +10

Vdc

Storage Temperature Range

Tstg

--65 to +150

C

Case Operating Temperature Range

--40 to +150

C

Operating Junction Temperature Range (1,2)

--40 to +225

C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (2)

Unit

Thermal Resistance, Junction to Case

CW: Case Temperature 81C, 25 W CW, 50 Vdc, IDQ = 10 mA, 512 MHz

RJC

1.4

C/W

Thermal Impedance, Junction to Case

Pulse: Case Temperature 77C, 25 W Peak, 100 sec Pulse Width,

20% Duty Cycle, 50 Vdc, IDQ = 10 mA, 512 MHz

ZJC

0.32

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

2, passes 2000 V

Machine Model (per EIA/JESD22--A115)

B, passes 200 V

Charge Device Model (per JESD22--C101)

IV, passes 1200 V

Table 4. Electrical Characteristics (TA =25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Gate--Source Leakage Current

(VGS =5 Vdc, VDS =0 Vdc)

IGSS

—

400

nAdc

Drain--Source Breakdown Voltage

(VGS =0 Vdc, ID =50 mA)

V(BR)DSS

133

140

—

Vdc

Zero Gate Voltage Drain Leakage Current

(VDS =50 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Zero Gate Voltage Drain Leakage Current

(VDS = 100 Vdc, VGS =0 Vdc)

IDSS

—

Adc

On Characteristics

Gate Threshold Voltage

(VDS =10 Vdc, ID =85 Adc)

VGS(th)

1.5

2.0

2.5

Vdc

Gate Quiescent Voltage

(VDD =50 Vdc, ID = 10 mAdc, Measured in Functional Test)

VGS(Q)

2.0

2.4

3.0

Vdc

Drain--Source On--Voltage

(VGS =10 Vdc, ID = 210 mAdc)

VDS(on)

—

0.23

—

Vdc

Dynamic Characteristics

Reverse Transfer Capacitance

(VDS =50 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Crss

—

0.17

—

Output Capacitance

(VDS =50 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Coss

—

14.7

—

Input Capacitance

(VDS =50 Vdc, VGS =0 Vdc  30 mV(rms)ac @ 1 MHz)

Ciss

—

39.0

—

1. Continuous use at maximum temperature will affect MTTF.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select

Documentation/Application Notes -- AN1955.

(continued)

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