MMRF1304LR5 datasheet(7/12 Pages) NXP

7 / 12 page

MMRF1304LR5

RF Device Data

Freescale Semiconductor, Inc.

TYPICAL CHARACTERISTICS — 512 MHz

VGS, GATE--SOURCE VOLTAGE (VOLTS)

Figure 7. CW Output Power versus Gate--Source

Voltage at a Constant Input Power

3.5

VDD = 50 Vdc, f = 512 MHz

Pin =0.07 W

Pin = 0.035 W

2.5

1.5

0.5

VDD =50 Vdc

IDQ =10 mA

f = 512 MHz

Pin, INPUT POWER (dBm)

512

28.7

31.6

(MHz)

P1dB

(W)

P3dB

(W)

Figure 8. CW Output Power versus Input Power

Pout, OUTPUT POWER (WATTS)

Figure 9. Power Gain and Drain Efficiency

versus CW Output Power and Quescient Current

100 mA

150 mA

VDD = 50 Vdc, f = 512 MHz

Gps

IDQ = 150 mA

50 mA

100 mA

50 mA

10 mA

Pout, OUTPUT POWER (WATTS)

Figure 10. Power Gain and Drain Efficiency

versus CW Output Power

25_C

TC =--40_C

85_C

VDD =50 Vdc

IDQ =10 mA

f = 512 MHz

25_C

--40_C

Gps

D

Pout, OUTPUT POWER (WATTS) PEAK

Figure 11. Power Gain versus Output Power

and Drain--Source Voltage

VDD =20 V

510

25 V

IDQ =10mA,f=512 MHz

Pulse Width = 100 sec

20% Duty Cycle

10 mA

D

30 V

35 V

40 V

45 V

50 V

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