© 2003 IXYS All rights reserved

1 - 3

I

dAVM

= 27 A

V

V

RSM

V

RRM

Type

V

DSM

V

DRM

VV

1300

1200

VVZ 24-12io1

1500

1400

VVZ 24-14io1

1700

1600

VVZ 24-16io1

Symbol

Test Conditions

Maximum Ratings

I

dAV

T

21

A

I

dAVM

module

27

A

I

per leg

16

A

I

T

t = 10 ms (50 Hz), sine

300

A

V

t = 8.3 ms (60 Hz), sine

320

A

T

t = 10 ms (50 Hz), sine

270

A

V

t = 8.3 ms (60 Hz), sine

290

A

T

t = 10 ms (50 Hz), sine

450

V

t = 8.3 ms (60 Hz), sine

430

T

t = 10 ms (50 Hz), sine

365

V

t = 8.3 ms (60 Hz), sine

350

(di/dt)

cr

T

repetitive, I

150

A/

ms

f =400 Hz, t

V

I

non repetitive, I

500

A/

ms

di

(dv/dt)

cr

T

V

1000

V/

ms

R

V

RGM

10

V

P

GM

T

t

£

10

W

I

t

500

ms

£

5W

t

£

1W

P

GAVM

0.5

W

T

VJ

-40...+125

°C

T

VJM

125

°C

T

stg

-40...+125

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

3000

V~

I

t = 1 s

3600

V~

M

d

Mounting torque

(M5)

2-2.5

Nm

(10-32 UNF)

18-22

lb.in.

Weight

typ.

28

g

Features

q

Package with DCB ceramic base plate

q

Isolation voltage 3600 V~

q

Planar passivated chips

q

Soldering terminals

q

UL registered E 72873

Applications

q

Input rectifier for switch mode power

supplies (SMPS)

q

Softstart capacitor charging

q

Electric drives and auxiliaries

Advantages

q

Easy to mount with two screws

q

Space and weight savings

q

Improved temperature and power

cycling

Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.

IXYS reserves the right to change limits, test conditions and dimensions.

Dimensions in mm (1 mm = 0.0394")

VVZ 24

Three Phase Half Controlled

Rectifier Bridge

2

1

3

4

5

6

7

8

2

8

5

7

4

16

3