AFT09S282N datasheet(3/14 Pages) NXP

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AFT09S282NR3

RF Device Data

Freescale Semiconductor, Inc.

Table 5. Electrical Characteristics (TA =25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 1400 mA, Pout = 80 W Avg., f = 960 MHz,

Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz

Channel Bandwidth @ ±5MHz Offset.

Power Gain

Gps

19.0

20.0

22.0

Drain Efficiency

ηD

33.5

36.1

—

Output Peak--to--Average Ratio @ 0.01% Probability on CCDF

PAR

5.6

6.1

—

Adjacent Channel Power Ratio

ACPR

—

--37.5

--36.0

dBc

Input Return Loss

IRL

—

--17

--10

Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1400 mA, f = 940 MHz

VSWR 10:1 at 32 Vdc, 416 W CW Output Power

(3 dB Input Overdrive from 280 W CW Rated Power)

No Device Degradation

Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 1400 mA, 920--960 MHz Bandwidth

Pout @ 1 dB Compression Point, CW

P1dB

—

280

—

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

VBWres

—

MHz

Gain Flatness in 40 MHz Bandwidth @ Pout =80 W Avg.

—

0.1

—

Gain Variation over Temperature

(--30°Cto+85°C)

∆G

—

0.0156

—

dB/°C

Output Power Variation over Temperature

(--30°Cto+85°C)

∆P1dB

—

0.006

—

dB/°C

1. Part internally matched both on input and output.

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