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CDCM1802RGTT Datasheet(PDF) 5 Page - Texas Instruments

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Part # CDCM1802RGTT
Description  CLOCK BUFFER WITH PROGRAMMABLE DIVIDER, LVPECL I/O ADDITIONAL LVCMOS OUTPUT
PDF  22 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

CDCM1802RGTT Datasheet(HTML) 5 Page - Texas Instruments

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CDCM1802
CLOCK BUFFER WITH PROGRAMMABLE DIVIDER,
LVPECL I/O + ADDITIONAL LVCMOS OUTPUT
SCAS759 − APRIL 2004
5
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature (unless otherwise noted)†
VDD
Supply voltage
−0.3 V to 3.8 V
VI
Input voltage
−0.2 V to (VDD +0.2 V)
VO
Output voltage
−0.2 V to (VDD +0.2 V)
Yn, Yn, IOSD
Differential short circuit current
Continuous
ESD
Electrostatic discharge (HBM 1.5 kΩ, 100 pF)
>2000 V
Moisture level 16-pin QFN package (solder reflow temperature of 235°C) MSL
1
Tstg
Storage temperature
−65°C to 150°C
TJ
Maximum junction temperature
125°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
recommended operating conditions
MIN
TYP
MAX
UNIT
Supply voltage, VDD
3
3.3
3.6
V
Supply voltage, VDD (only functionality)
2.375
3.6
V
Operating free-air temperature, TA
−40
85
°C
electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
LVPECL INPUT IN, IN
fclk
Input frequency
0
800
MHz
VCM
High-level input common mode
1
VDD−0.3
V
VIN
Input voltage swing between IN and IN,
See Note 1
500
1300
mV
VIN
Input voltage swing between IN and IN,
See Note 2
150
1300
mV
IIN
Input current
VI = VDD or 0 V
±10
µA
RIN
Input impedance
300
kΩ
CI
Input capacitance at IN, IN
1
pF
LVPECL OUTPUT DRIVER Y0, Y0
fclk
Output frequency, See Figure 4
0
800
MHz
VOH
High-level output voltage
Termination with 50 Ω to VDD−2 V
VDD−1.18
VDD–0.81
V
VOL
Low-level output voltage
Termination with 50 Ω to VDD−2 V
VDD−1.98
VDD–1.55
V
VO
Output voltage swing between Y and Y,
See Figure 4
Termination with 50 Ω to VDD−2 V
500
mV
IOZL
Output 3-state
VDD = 3.6 V, VO = 0 V
5
µA
IOZH
Output 3-state
VDD = 3.6 V, VO = VDD – 0.8 V
10
µA
tr/tf
Rise and fall time
20% to 80% of VOUTPP, see Figure 9
200
350
ps
tDuty
Output duty cycle distortion, See Note 3
Crossing point-to-crossing point distortion
−50
50
ps
tsk(pp)
Part-to-part skew
Any Y0, See Note A in Figure 8
50
ps
CO
Output capacitance
VO = VDD or GND
1
pF
LOAD
Expected output load
50
Ω



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