Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

BGS8L2 Datasheet(PDF) 1 Page - NXP Semiconductors

Part # BGS8L2
Description  SiGe:C Low-noise amplifier MMIC with bypass switch for LTE
PDF  18 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

BGS8L2 Datasheet(HTML) 1 Page - NXP Semiconductors

  BGS8L2 Datasheet HTML 1Page - NXP Semiconductors BGS8L2 Datasheet HTML 2Page - NXP Semiconductors BGS8L2 Datasheet HTML 3Page - NXP Semiconductors BGS8L2 Datasheet HTML 4Page - NXP Semiconductors BGS8L2 Datasheet HTML 5Page - NXP Semiconductors BGS8L2 Datasheet HTML 6Page - NXP Semiconductors BGS8L2 Datasheet HTML 7Page - NXP Semiconductors BGS8L2 Datasheet HTML 8Page - NXP Semiconductors BGS8L2 Datasheet HTML 9Page - NXP Semiconductors Next Button
Zoom Inzoom in Zoom Outzoom out
 1 / 18 page
background image
BGS8L2
SiGe:C Low-noise amplifier MMIC with bypass switch for LTE
Rev. 6 — 29 June 2018
Product data sheet
COMPANY PUBLIC
1 General description
The BGS8L2, also known as the LTE3001L, is a Low-Noise Amplifier (LNA) with bypass
switch for LTE receiver applications, available in a small plastic 6-pin extremely thin
leadless package. The BGS8L2 requires one external matching inductor.
The BGS8L2 delivers system-optimized gain for both primary and diversity applications
where sensitivity improvement is required. The high linearity of these low noise devices
ensures the required receive sensitivity independent of cellular transmit power level in
FDD (Frequency Division Duplex) systems. When receive signal strength is sufficient, the
BGS8L2 can be switched off to operate in bypass mode at a 1 µA current, to lower power
consumption.
The BGS8L2 can also be used in Digital TV receivers in the frequency range 460 MHz -
740 MHz.
The BGS8L2 is optimized for 460 MHz to 960 MHz.
2 Features and benefits
• Operating frequency from 460 MHz to 960 MHz
• Noise figure = 0.85 dB
• Gain 13 dB
• High input 1 dB compression point of -1 dBm
• Bypass switch insertion loss of 1.9 dB
• IP3i of 1.5 dBm
• Supply voltage 1.5 V to 3.1 V
• Self-shielding package concept
• Integrated supply decoupling capacitor
• Optimized performance at a supply current of 5.2 mA @ 2.8 V
• Power-down mode current consumption < 1 μA
• Integrated temperature stabilized bias for easy design
• Requires only one input matching inductor
• Input and output DC decoupled
• ESD protection on all pins (HBM > 2 kV)
• Integrated matching for the output
• Available in 6-pins leadless package 1.1 mm × 0.7 mm × 0.37 mm; 0.4 mm pitch:
SOT1232
• 180 GHz transit frequency - SiGe:C technology
• Moisture sensitivity level 1


Similar Part No. - BGS8L2

ManufacturerPart #DatasheetDescription
logo
NXP Semiconductors
BGS8L4UK NXP-BGS8L4UK Datasheet
178Kb / 13P
SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE
Rev. 1-1 December 2015
BGS8L5 NXP-BGS8L5 Datasheet
201Kb / 15P
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
Rev. 1-2 March 2018
More results

Similar Description - BGS8L2

ManufacturerPart #DatasheetDescription
logo
NXP Semiconductors
BGS8H2 NXP-BGS8H2 Datasheet
295Kb / 15P
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
Rev. 3-29 June 2018
BGS8L5 NXP-BGS8L5 Datasheet
201Kb / 15P
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
Rev. 1-2 March 2018
BGS8M2 NXP-BGS8M2 Datasheet
305Kb / 15P
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
Rev. 4-13 June 2018
BGU8H1 NXP-BGU8H1 Datasheet
106Kb / 11P
SiGe:C low-noise amplifier MMIC for LTE
Rev. 3-16 January 2017
BGU8M1 NXP-BGU8M1 Datasheet
106Kb / 11P
SiGe:C low-noise amplifier MMIC for LTE
Rev. 3-16 January 2017
BGS8L4UK NXP-BGS8L4UK Datasheet
178Kb / 13P
SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE
Rev. 1-1 December 2015
BGS8M4UK NXP-BGS8M4UK Datasheet
178Kb / 13P
SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE
Rev. 1-1 December 2015
LTE3401H NXP-LTE3401H Datasheet
214Kb / 17P
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
Rev. 3-28 June 2019
LTE3401L NXP-LTE3401L Datasheet
200Kb / 15P
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
Rev. 3.2-18 December 2018
BGS8U5 NXP-BGS8U5 Datasheet
247Kb / 20P
SiGe:C low-noise amplifier with bypass switch for LTE/5G NR
Rev. 5-1 December 2021
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com