NXP Semiconductors

BGS8L2

SiGe:C Low-noise amplifier MMIC with bypass switch for LTE

BGS8L2

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2018. All rights reserved.

Product data sheet

Rev. 6 — 29 June 2018

COMPANY PUBLIC

11 / 18

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

f = 470 MHz, L1 = 18 nH

[1] -8.5

-4.5

-

dBm

f = 650 MHz, L1 = 18 nH

[1] -7.5

-3.5

-

dBm

f = 740 MHz, L1 = 18 nH

[1] [2] -6.0

-2.0

-

dBm

f = 740 MHz, L1 = 8.2 nH

[1] [2] -6.0

-2.0

-

dBm

f = 882 MHz, L1 = 8.2 nH

[1] [3] -5.0

-1.0

-

dBm

input power at 1 dB gain

compression

f = 943 MHz, L1 = 8.2 nH

[1] [4] -4.5

-0.5

-

dBm

f = 470 MHz, L1 = 18 nH

[1] -9.5

-4.5

-

dBm

f = 650 MHz, L1 = 18 nH

[1] -5

0.0

-

dBm

f = 740 MHz, L1 = 18 nH

[1] [2] -4.5

+0.5

-

dBm

f = 740 MHz, L1 = 8.2 nH

[1] [2] -3.5

+1.5

-

dBm

f = 882 MHz, L1 = 8.2 nH

[1] [3] -3.5

+1.5

-

dBm

input third-order intercept point

f = 943 MHz, L1 = 8.2 nH

[1] [4] -3.5

+1.5

-

dBm

K

Rollett stability factor

1

-

-

turn-on time

of the gain

-

-

2.1

μs

turn-off time

of the gain

-

-

0.3

μs