SIM6800M datasheet(27/52 Pages) SANKEN

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SIM6800M Series

SIM6800M-DSE Rev.1.5

SANKEN ELECTRIC CO., LTD

Jul. 18, 2018

http://www.sanken-ele.co.jp/en

● When mounting a heatsink, it is recommended to use

silicone greases. If a thermally conductive sheet or an

electrically insulating sheet is used, package cracks

may be occurred due to creases at screw tightening.

Therefore, you should conduct thorough evaluations

before using these materials.

● When applying a silicone grease, make sure that there

must be no foreign substances between the IC and a

heatsink. Extreme care should be taken not to apply a

silicone grease onto any device pins as much as

possible. The following requirements must be met for

proper grease application:

- Grease thickness: 100 µm

- Heatsink flatness: ±100 µm

- Apply silicone grease within the area indicated in

Figure 13-2, below.

Heatsink

Thermal silicone

grease application area

1.25

31.3

Unit: mm

7.4

M2.5

Screw hole

Figure 13-2.

Reference Application Area for Thermal

Silicone Grease

13.3 Considerations in IC Characteristics

Measurement

When measuring the breakdown voltage or leakage

current of the transistors incorporated in the IC, note that

the gate and emitter (source) of each transistor should

have the same potential. Moreover, care should be taken

when performing the measurements, because each

transistor is connected as follows:

● All the high-side collectors (drains) are internally

connected to the VBB pin.

● In the U-phase, the high-side emitter (source) and the

low-side collector (drain) are internally connected,

and are also connected to the U pin.

(In the V- and W-phases, the high- and low-side

transistors are unconnected inside the IC.)

The gates of the high-side transistors are pulled down

to the corresponding output (U, V/V1, and W1) pins;

similarly, the gates of the low-side transistors are pulled

down to the COM2 pin.

When measuring the breakdown voltage or leakage

current of the transistors, note that all of the output (U,

V/V1, and W1), LSx, and COMx pins must be

appropriately

connected.

Otherwise

the

switching

transistors may result in permanent damage.

The following are circuit diagrams representing

typical measurement circuits for breakdown voltage:

Figure 13-3 shows the high-side transistor (Q1H) in the

U-phase; Figure 13-4 shows the low-side transistor (Q1L)

in the U-phase. And all the pins that are not represented

in these figures are open.

When measuring the high-side transistors, leave all

the pins not be measured open. When measuring the

low-side transistors, connect the LSx pin to be measured

to the COMx pin, then leave other unused pins open.

COM2

COM1

VBB

LS3B

LS2

LS3A

LS2

LS1

MIC

Q1H

Q1L

Q2L Q3L

Q2H

Q3H

Figure 13-3.

Typical Measurement Circuit for High-

side Transistor (Q1H) in U-phase

COM2

COM1

VBB

LS3B

LS2

LS3A

LS2

LS1

MIC

Q1H

Q1L

Q2L Q3L

Q2H

Q3H

Figure 13-4.

Typical Measurement Circuit for Low-

side Transistor (Q1L) in U-phase

SIM6800M Datasheet(PDF) 27 Page - Sanken electric

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