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SIM6800M Datasheet(PDF) 30 Page - Sanken electric

Part # SIM6800M
Description  500V / 600V High Voltage 3-phase Motor Driver ICs
PDF  52 Pages
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Manufacturer  SANKEN [Sanken electric]
Direct Link  http://www.sanken-ele.co.jp/en
Logo SANKEN - Sanken electric

SIM6800M Datasheet(HTML) 30 Page - Sanken electric

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SIM6800M Series
SIM6800M-DSE Rev.1.5
SANKEN ELECTRIC CO., LTD
30
Jul. 18, 2018
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2014
14.2.3
Body Diode Steady-state Loss, PSD
Steady-state loss in the body diode of a power
MOSFET can be computed by using the VSD vs. ISD
curves, listed in Section 15.3.1. As expressed by the
curves in Figure 14-3, linear approximations at a range
the ISD is actually used are obtained by: VSD =
α × I
SD +
β.
The values gained by the above calculation are then
applied as parameters in Equation (9), below. Hence, the
equation to obtain the body diode steady-state loss, PSD,
is:
PSD= 12π�VSD(φ)×ISD(φ)×(1−DT)×dφ
π
0
=12α�12−43πM×cosθ�IM2
+√2πβ�12−π8M×cosθ�IM. (9)
Where:
VSD is the source-to-drain diode forward voltage of the
power MOSFET (V),
ISD is the source-to-drain diode forward current of the
power MOSFET (A),
DT is the duty cycle, which is given by
DT=1+M×sin(φ+θ)
2 ,
M is the modulation index (0 to 1),
cosθ is the motor power factor (0 to 1),
IM is the effective motor current (A),
α is the slope of the linear approximation in the V
SD vs.
ISD curve, and
β is the intercept of the linear approximation in the
VSD vs. ISD curve.
Figure 14-3.
Linear Approximate Equation of
VSD vs. ISD Curve
14.2.4
Estimating Junction Temperature
of Power MOSFET
The junction temperature of all power MOSFETs
operating, Tj, can be estimated with Equation (10):
Tj=Rj−C×{(PON+PSW+PSD)×6}+TC. (10)
Where:
Rj-C is the junction-to-case thermal resistance (°C/W)
of all the power MOSFETs operating, and
TC is the case temperature (°C), measured at the point
defined in Figure 3-1.
0.0
0.5
1.0
1.5
2.0
2.5
0.0
1.0
2.0
3.0
4.0
5.0
I
SD (A)
VCC = 15 V
25
°C
75
°C
125
°C
y = 0.2888x + 0.8758



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