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SIM6800M Datasheet(PDF) 30 Page - Sanken electric |
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SIM6800M Datasheet(HTML) 30 Page - Sanken electric |
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30 / 52 page ![]() SIM6800M Series SIM6800M-DSE Rev.1.5 SANKEN ELECTRIC CO., LTD 30 Jul. 18, 2018 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2014 14.2.3 Body Diode Steady-state Loss, PSD Steady-state loss in the body diode of a power MOSFET can be computed by using the VSD vs. ISD curves, listed in Section 15.3.1. As expressed by the curves in Figure 14-3, linear approximations at a range the ISD is actually used are obtained by: VSD = α × I SD + β. The values gained by the above calculation are then applied as parameters in Equation (9), below. Hence, the equation to obtain the body diode steady-state loss, PSD, is: PSD= 12π�VSD(φ)×ISD(φ)×(1−DT)×dφ π 0 =12α�12−43πM×cosθ�IM2 +√2πβ�12−π8M×cosθ�IM. (9) Where: VSD is the source-to-drain diode forward voltage of the power MOSFET (V), ISD is the source-to-drain diode forward current of the power MOSFET (A), DT is the duty cycle, which is given by DT=1+M×sin(φ+θ) 2 , M is the modulation index (0 to 1), cosθ is the motor power factor (0 to 1), IM is the effective motor current (A), α is the slope of the linear approximation in the V SD vs. ISD curve, and β is the intercept of the linear approximation in the VSD vs. ISD curve. Figure 14-3. Linear Approximate Equation of VSD vs. ISD Curve 14.2.4 Estimating Junction Temperature of Power MOSFET The junction temperature of all power MOSFETs operating, Tj, can be estimated with Equation (10): Tj=Rj−C×{(PON+PSW+PSD)×6}+TC. (10) Where: Rj-C is the junction-to-case thermal resistance (°C/W) of all the power MOSFETs operating, and TC is the case temperature (°C), measured at the point defined in Figure 3-1. 0.0 0.5 1.0 1.5 2.0 2.5 0.0 1.0 2.0 3.0 4.0 5.0 I SD (A) VCC = 15 V 25 °C 75 °C 125 °C y = 0.2888x + 0.8758 |
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