ACE4010M200P datasheet(3/7 Pages) ACE

3 / 7 page

ACE4010M200P

P-Channel 100-V MOSFET

VER 1.1

Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = -250 uA

Gate-Body Leakage

IGSS

VDS= 0 V, VGS= ±20 V

±100

Zero Gate Voltage Drain

Current

IDSS

VDS =-80 V, VGS = 0 V

-1

VDS = -80 V, VGS = 0 V, TJ = 55°C

-25

On-State Drain Current

ID(on)

VDS = -5 V, VGS = 10 V

100

Drain-Source On-Resistance

rDS(on)

VGS = -10 V, ID = 20 A

265

mΩ

VGS = -5.5 V, ID = 18 A

280

Forward Transconductance

gfs

VDS = -15 V, ID = 20 A

Diode Forward Voltage

VSD

IS= -20 A, VGS = 0 V

-1

Dynamic

Total Gate Charge

DS= -50 V, VGS = -5.5 V, ID= -10 A

Gate-Source Charge

Qgs

8.2

Gate-Drain Charge

Qgd

8.8

Turn-On Delay Time

td(on)

DS= -50 V, RL= 5 Ω, ID = -10 A,

GEN= -10 V, RGEN= 6 Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

Input Capacitance

Ciss

DS = -15 V, VGS = 0 V, f = 1 MHz

1615

Output Capacitance

Coss

107

Reverse Transfer Capacitance

Crss

Note :

Pulse test: PW <= 300us duty cycle <= 2%.

Guaranteed by design, not subject to production testing

ACE4010M200P Datasheet(PDF) 3 Page - ACE Technology Co., LTD.

ACE4010M200P Datasheet(HTML) 3 Page - ACE Technology Co., LTD.

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL