ACE4010M200P datasheet(1/7 Pages) ACE

Part #	ACE4010M200P

Description	P-Channel 100-V MOSFET

PDF	7 Pages

Scroll/Zoom	100%

Manufacturer	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE4010M200P

P-Channel 100-V MOSFET

VER 1.1

1

Description

The ACE4010M200P uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications. The source leads are separated to

allow a Kelvin connection to the source, which may be used to bypass the source inductance.

Features

 Low r

DS(on) trench technology

 Low thermal impedance

 Fast switching speed

Applications

 White LED boost converters

 Automotive Systems

 Industrial DC/DC Conversion Circuits

Absolute Maximum Ratings

Parameter

Symbol

Limit

Units

Drain-Source Voltage

VDS

-100

V

Gate-Source Voltage

VGS

±20

V

Continuous

Drain Current

a

TA=25℃

ID

-27

A

Pulsed Drain Current

b

IDM

-100

A

Continuous Source Current (Diode Conduction)

a

IS

100

A

Power Dissipation

a

TA=25℃

PD

300

W

Operating temperature / storage temperature

TJ/TSTG

-55~150

℃

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Maximum

Units

Maximum Junction-to-Ambient

a

t <= 10 sec

RθJA

62.5

°C/W

Steady State

1

Notes

a. Surface Mounted o

n 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

PRODUCT SUMMARY

VDS (V)

rDS(on) (mΩ)

ID(A)

-100

265 @ VGS = -10V

-27

a

280 @ VGS = -5.5V

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ACE4010M200P Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

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