ACE11013A datasheet(3/7 Pages) ACE

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ACE11013A

P-Channel Enhancement Mode MOSFET

VER 1.1

Electrical Characteristics

TA=25℃, unless otherwise noted.

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=-250uA

-20

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=-250uA

-0.35

-0.8

Gate Leakage Current

IGSS

VDS=0V,VGS=±12V

±100

Zero Gate Voltage Drain Current

IDSS

VDS=-20V, VGS=0V

-1

VDS=-20V, VGS=0V, TJ=55℃

-5

On-State Drain Current

ID(on)

VDS

≤ -4.5V,V

GS =-0.45V

-0.7

Drain-Source On-Resistance

RDS(ON)

VGS=-4.5V, ID=-0.45A

0.42

0.52

VGS=-2.5V, ID=-0.35A

0.58

0.70

VGS=-1.8V, ID=-0.25A

0.75

0.95

Forward Trans Conductance

gfs(1)

VDS=-10V, ID=-0.25A

0.4

Diode Forward Voltage

VSD(1)

VGS=0V, IS=-0.15A

-0.8

-1.2

Dynamic

Total Gate Charge

VDS=-10V, VGS=-4.5V, ID

≡-0.6A

1.5

2.0

Gate-Source Charge

Qgs

0.3

Gate-Drain Charge

Qgd

0.35

Turn-On Time

td(on)

VDD=-10V, ID

≡-0.4A, R

L=10

RG=6

Ω, V

GEN=-4.5V

Turn-Off Time

td(off)

1.4

1.8

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