ACE11013A

P-Channel Enhancement Mode MOSFET

VER 1.1

1

Description

The ACE11013A is the P-Channel enhancement mode power field effect transistors are produced

using high cell density, DMOS trench technology. This high density process is especially tailored to

minimize on-state resistance and provide superior switching performance. These devices are particularly

suited for low voltage applications such as notebook computer power management and other battery

powered circuits where high-side switching, low in-line power loss and resistance to transients are

needed.

Features



= 0.52Ω@V



= 0.70Ω@V



= 0.95Ω@V





Exceptional on-resistance and maximum DC current capability



SOT-523 package design

Applications



Drivers : Relays/Solenoids/Lamps/Hammers



Power Supply Converter Circuits



Load/Power Switching Cell Phones, Pagers

Absolute Maximum Ratings

Parameter

Symbol

Typical

Unit

Drain-Source Voltage

-20

V

Gate-Source Voltage

±12

V

-0.45

A

-0.35

Pulsed Drain Current(*)

-1.0

A

Continuous Source Current(Diode Conduction)

-0.3

A

Power Dissipation

0.27

A

0.16

Operating Junction Temperature

-55~150

Storage Temperature Range

-55~150