IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA120N04T2

IXTP120N04T2

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

28

47

S

C

iss

3240

pF

C

oss

V

557

pF

C

rss

140

pF

t

d(on)

14

ns

t

r

8

ns

t

d(off)

16

ns

t

f

11

ns

Q

g(on)

58

nC

Q

gs

V

17

nC

Q

gd

10

nC

R

thJC

0.75

C/W

R

thCS

TO-220

0.50

C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

120

A

I

SM

Repetitive, Pulse Width Limited by T

JM

480

A

V

SD

I

1.2

V

t

rr

35

ns

I

RM

1.6

A

Q

RM

28

nC

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

7,005,734B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

7,063,975B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728B1

6,583,505

6,710,463

6,771,478B2 7,071,537

I

-di/dt = 100A/

s, V

Resistive Switching Times

V

R

2. On through-hole packages, R

location must be 5mm or less from the package body.

TO-220 Outline

1 - Gate

2,4 - Drain

3 - Source

E1

E

A

D1

D

Q

L1

oP

H1

A1

L

A2

D2

e

c

e1

e1

3X b2

e

3X b

EJECTOR

PIN

TO-263 Outline

1 - Gate

2,4 - Drain

3 - Source

C2

A

H

1

b

D

E

D1

E1

b2

L2

L1

2

3

4

L3

A2

A1

e

c

e

0



0.43 [11.0]

0.66 [16.6]

0.06 [1.6]

0.10 [2.5]

0.20 [5.0]

0.34 [8.7]

60.12 [3.0]