IXTH24N50L

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

e

∅ P

TO-247 (IXTH) Outline

1

2

3

Terminals: 1 - Gate

2 - Drain

3 - Source

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80 21.46

.819

.845

E

15.75 16.26

.610

.640

e

5.20

5.72 0.205 0.225

L

19.81 20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40 0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

Note

1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

3

7

11

S

C

iss

2500

pF

C

oss

V

400

pF

C

rss

100

pF

t

d(on)

35

ns

t

r

85

ns

t

d(off)

110

ns

t

f

75

ns

Q

g(on)

160

nC

Q

gs

V

30

nC

Q

gd

50

nC

R

thJC

R

thCS

0.21

°C/W

Safe-Operating-Area Specification

Symbol

Test Conditions

Characteristic Values

Min.

Typ.

Max.

SOA

V

200

W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

24

A

I

SM

Repetitive, Pulse Width Limited by T

JM

96

A

V

SD

I

1.5

V

t

rr

500

ns

Resistive Switching Times

V

R

I

V