LP2301ALT3G datasheet(2/5 Pages) LRC

2 / 5 page

LP2301ALT1G, S-LP2301ALT1G

20V P-Channel Enhancement-Mode MOSFET

6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)

OFF CHARACTERISTICS

Characteristic

Drain–Source Breakdown Voltage

(VGS = 0, ID = -250μAdc)

Zero Gate Voltage Drain Current

(VGS = 0, VDS = -20 Vdc)

Gate–Body Leakage Current, Forward

(VGS = 8 Vdc)

Gate–Body Leakage Current, Reverse

(VGS = - 8 Vdc)

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

(VDS = VGS, ID = -250μAdc)

Static Drain–Source On–State Resistance

(VGS = -4.5 Vdc, ID = -2.8 Adc)

(VGS = -2.5 Vdc, ID = -2 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

(VGS = 0 V, f = 1.0MHz,VDS= -15 V)

Output Capacitance

(VGS = 0 V, f = 1.0MHz,VDS= -15 V)

Reverse Transfer Capacitance

(VGS = 0 V, f = 1.0MHz,VDS= -15 V)

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward Voltage

(VGS = 0 Vdc, ISD = -1 Adc)

2.Pulse Test: Pulse Width ≤

300 μs, Duty Cycle ≤2.0%.

td(off)

(VDS=-6V, RL =6Ω,

RGEN=6Ω ,VGS=-4.5V )

RDS(on)

-0.4

Ciss

VGS(th)

IDSS

td(on)

150

-0.6

100

Typ.

Max.

IGSSR

-100

VSD

-0.7

-1.4

mΩ

Unit

Vdc

-20

Symbol

Min.

-1

Vdc

IGSSF

μAdc

nAdc

VBRDSS

480

Coss

Crss

110

Leshan Radio Company, LTD.

2/5

Rev.C Sep. 2018

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