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Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼
▼
▼
▼ Low on-resistance
BVDSS
20V
▼
▼
▼
▼ Capable of 2.5V gate drive
RDS(ON)
23mΩ
▼
▼
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▼ Optimal DC/DC battery application
ID
5A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
125
℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
1
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.008
Drain Current
3, V
GS @ 4.5V
3.5
Pulsed Drain Current
1
25
Gate-Source Voltage
±12
Drain Current
3, V
GS @ 4.5V
5
Parameter
Rating
Drain-Source Voltage
20
200206031
AP9928EO
S1
G1
D1
S2
G2
D2
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D2
S2
S2
G2
D1
S1
S1
G1
TSSOP-8
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