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SSM4226M/GM

8/06/2004 Rev.1.02

DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Low on-resistance

30V

Simple drive requirement

18m

Ω

8.2A

Description

Absolute Maximum Ratings

Symbol

Units

V

V

A

W/°C

Symbol

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient

3

Max.

62.5

°C/W

Parameter

Rating

Drain-Source Voltage

30

Gate-Source Voltage

± 20

Continuous Drain Current

3

8.2

A

Continuous Drain Current

3

6.7

A

Pulsed Drain Current

1

30

Total Power Dissipation

2

W

-55 to 150

°C

Operating Junction Temperature Range

-55 to 150

°C

Linear Derating Factor

0.016

Thermal Data

Parameter

Storage Temperature Range

Advanced Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

G2

D2

S2

G1

D1

S1

S1

G1

S2

G2

D1

D1

D2

D2

SO-8

This device is available with Pb-free lead finish (second-level interconnect) as SSM4226GM.